M09000 - SEMI M90 - Test Method for Bulk Micro Defect Density and Denuded Zone Width in Annealed Silicon Wafers by Optical Microscopy After Preferential Etching StdPbc-1017 This Test Method is applied

This Test Method is applied to determine the crystallographic orientation of a surface which is substantially parallel to the low index planes for sapphire single crystal materials

SEMI G19-0997 (Reapproved 0811)

This edition was approved for publication by the global Audits and Reviews Subcommittee on April 25

It has been replaced by SEMI AUX030

Materials kinds or cleanliness are not defined

M09000 - SEMI M90 - Test Method for Bulk Micro Defect Density and Denuded Zone Width in Annealed Silicon Wafers by Optical Microscopy After Preferential Etching StdPbc-1017 This Test Method is appliedThis Standard defines the measurement method for bulk micro defect (BMD) densities and denuded zone (DZ) width in annealed silicon wafers. This Standard describes the preferential etching technique to measure BMD density and DZ width. The BMD and DZ width are one of important characteristic parameters of annealed wafer which has meant the gettering capability. This Standard defines measurement technique of BMD density and DZ width. BMD and DZ form in