MF104900 - SEMI MF1049 - Practice for Shallow Etch Pit Detection on Silicon Wafers StdPbc-0321 or JEITA EM-3603B)

or JEITA EM-3603B)

1  This version of the Specification applies to the substrate types: wafers

SEMI MF391-1106 (technical revision)

2グレード，シリンダ充填窒素に対する最大許容パーティクル濃度の設定，および(2)その確認のための基準方法の記述である。

This Guide define acceptable CMP criteria of TSV in terms of dishing

MF104900 - SEMI MF1049 - Practice for Shallow Etch Pit Detection on Silicon Wafers StdPbc-0321 or JEITA EM-3603B)This Practice covers detection of high densities of shallow etch pits on silicon wafers doped either p or n type and with resistivities as low as 0. 005 cm. This Practice is applicable for silicon wafers cut from crystals grown in either a (111) or (100) crystal orientation. This Practice is not recommended for use in defect density evaluations, but as a subjective means of estimating defect densities and distributions on the surface of a polished or