G05000 - SEMI G50 - Specification for Co-Fired Ceramic Fine Pitch Leaded and Leadless Chip Carrier Package Constructions Revision:Default Title The purpose of this Document

The purpose of this Document is to provide a Guide for ethylene glycol for which a need has been identified

ガス相水分レベルは表面からの脱着によって支配されるので，この手順は，表面積の大きい部品，例えばパーティクルフィルタや管のような部品に最も役立つと予想される。湿潤表面積が非常に小さな部品は，その水分相互作用が小さすぎてこのテストでは測定できない場合がある。チェックバルブとリリーフバルブがテストできるのは，それらの操作パラメータがテスト条件と一致しているときだけである。

SEMI M65 — Specifications for Sapphire Substrates to Use for Compound Semiconductor Epitaxial Wafers

This document provides a method to measure etch pit density (EPD) in low dislocation density InP wafers

SEMI C20-0213 (technical revision)

G05000 - SEMI G50 - Specification for Co-Fired Ceramic Fine Pitch Leaded and Leadless Chip Carrier Package Constructions Revision:Default Title The purpose of this DocumentThis specification defines the standard requirements for co fired ceramic fine pitch chip carrier constructions, including both top brazed leaded and top metallized leadless configurations. These constructions are for hermetic packaging of various devices, (e. g., high speed, digital VLSI silicon devices), and next level interconnection to printed wiring assemblies and modules by either lead solder attachment or by "leads last" techniques. Referenced