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PROFINET INTERFACE
802D Product Group 5707 Group Code R2S1 Country of origin China
4 interfaces: 1 MPI/DP
MOSFET 4N-CH 1000V 22A SP3
SITOP modular redundancy module Input/output: 24 V DC/40 A suitable for decoupling two SITOP power supplies with maximal per 20 A output current
CM200DY-13T 1200V 200A MITSUBISHI IGBT module Microchip PROFINET INTERFACECM200DY 13T 1200V 200A MITSUBISHI IGBT module Manufacturer: Mitsubishi Electric Product Category: IGBT Modules Configuration: Dual Collector Emitter Voltage VCEO Max: 1200 V Collector Emitter Saturation Voltage: 1. 8 V Continuous Collector Current at 25 C: 200 A Gate Emitter Leakage Current: 0. 5 uA Pd Power Dissipation: 1130 W Minimum Operating Temperature: 40 C Maximum Operating Temperature: + 150 C Brand: Mitsubishi Electric Maximum Gate Emitter
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