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Multicrystalline silicon (mc-Si) wafers produced by casting and controlled solidification usually contain regions containing high grown-in defect density in addition to the grain boundaries
This Test Method refers to the analysis of the bulk of the materials
in order to improve the consistency of wafer marking and allow simplification of the performance requirement of automatic optical character recognition (OCR) equipment
UTV system is used to automate the movement of material within semiconductor or flat panel display (FPD) factories or laboratories
are the thickness and the optical properties of fabricated layers and the critical dimensions (CD) of submicron structures
F03300 - SEMI F33 - Test Method for Calibration of Atmospheric Pressure Ionization Mass Spectrometer (APIMS) Revision:SEMI F33-0708 - Inactive Multicrystalline silicon (mc-Si) wafers producedThis standard was technically approved by the global Gases Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on May 13, 2008. It was available at www. semi. org in June 2008. Originally published in 1998. NOTICE: This Standard or Safety Guideline has an Inactive Status because the conditions to maintain Current Status have not been met. Inactive Standards or Safety Guidelines are available from SEMI and
